HOMOJUNCTION LED PDF

A homojunction is a semiconductor interface that occurs between layers of similar semiconductor material, these materials have equal band gaps but typically have different doping. In most practical cases a homojunction occurs at the interface between an n-type donor doped and p-type acceptor doped semiconductor such as silicon , this is called a p-n junction. This is not a necessary condition as the only requirement is that the same semiconductor same band gap is found on both sides of the junction, in contrast to a heterojunction. An n-type to n-type junction, for example, would be considered a homojunction even if the doping levels are different. The different doping level will cause band bending , and depletion region will be formed at the interface, as shown in the right figure. From Wikipedia, the free encyclopedia.

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A homojunction is a semiconductor interface that occurs between layers of similar semiconductor material, these materials have equal band gaps but typically have different doping. In most practical cases a homojunction occurs at the interface between an n-type donor doped and p-type acceptor doped semiconductor such as silicon , this is called a p-n junction.

This is not a necessary condition as the only requirement is that the same semiconductor same band gap is found on both sides of the junction, in contrast to a heterojunction. An n-type to n-type junction, for example, would be considered a homojunction even if the doping levels are different.

The different doping level will cause band bending , and depletion region will be formed at the interface, as shown in the right figure. From Wikipedia, the free encyclopedia. This article does not cite any sources.

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ADOLFO ARRIOJA VIZCAINO PDF

Homojunction

Continue to access RSC content when you are not at your institution. Follow our step-by-step guide. Cubic phase zinc-blende GaN referred to as c-GaN -based phosphor-free white light emitting diodes LEDs can exhibit superior characteristics and ultrahigh efficiency compared with conventional hexagonal phase wurtzite GaN referred as h-GaN -based examples. However, one notorious issue is low quality of c-GaN due to thermodynamical instability of cubic phase, epilayer-substrate chemical incompatibility, and large lattice-mismatch during epitaxial deposition, giving rise to insufficient light emission efficiency. Here, we report the growth of high quality single crystalline GaN microcubes MCs with pure zinc-blende phase for large scale production by the chemical vapor deposition method. From the GaN MCs, high-performance yellow luminescence YL is observed by different temperature photoluminescence spectra and the possible origin of the YL band is investigated. Furthermore, the fabricated phosphor-free single homojunction based on individual GaN MCs showed a diode nonlinear rectification behavior and the electroluminescence exhibited white emission when the operating voltage is 12 V.

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